Search results for " Ga"

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Latvijas Vēstures Institūta Žurnāls. 2012, Nr. 2 (83)

2012

Valsts pētījuma programma "Nacionālā identitāte: valoda, Latvijas vēsture, kultūra un cilvēkdrošība"

"Bērnu arheoloģija" un Latvijas arheoloģiskā materiāla izmantošana:HUMANITIES and RELIGION::History and philosophy subjects::Archaeology subjects [Research Subject Categories]:HUMANITIES and RELIGION::History and philosophy subjects::History subjects [Research Subject Categories]RecenzijasV. Grīna vadītās ASV misijas darbība Latvijā 1919. gadāThe Sources on the Early Modern Livonia in the Polish Crown Chancery BooksZinātnes dzīveVēstures avotiLielo kapu rekonstrukcijas piemērsPersonālijas
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Structure, morphology and photoluminescence emissions of ZnMoO4: RE 3+=Tb3+ - Tm3+ - X Eu3+ (x = 1, 1.5, 2, 2.5 and 3 mol%) particles obtained by the…

2018

Made available in DSpace on 2018-12-11T17:36:34Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-06-25 Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Ministerio de Economía y Competitividad ZnMoO4 and ZnMoO4: RE3+ = 1% Tb3+, 1% Tm3+, x Eu3+ (x = 1, 1.5, 2, 2.5 and 3 mol%) particles were prepared by a sonochemical method. The influence of the dopant content on photoluminescent behavior was investigated. The X-ray diffraction results confirmed the formation of the α-ZnMoO4 phase with a triclinic crystalline structure. The influence of th…

- Tm3+- Eu3+PhotoluminescenceMaterials scienceEu3+Tm3+Band gapAnalytical chemistryPhosphor02 engineering and technologyTriclinic crystal system010402 general chemistry01 natural sciencesSonochemical method PhotoluminescenceTb3+Materials ChemistrySINTERIZAÇÃOPhotoluminescenceQuenchingDopantMechanical EngineeringMetals and AlloysTb3+ [ZnMoO4]021001 nanoscience & nanotechnology0104 chemical sciencesMechanics of MaterialsDensity functional theoryZnMoO4Wulff constructionSonochemical method0210 nano-technology
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Vacancy-like Dressed States in Topological Waveguide QED

2020

We identify a class of dressed atom-photon states formingat the same energy of the atom at any coupling strength. As a hallmark, their photonic component is an eigenstate of the bare photonic bath with a vacancy in place of the atom. The picture accommodates waveguide-QED phenomena where atoms behave as perfect mirrors, connecting in particular dressed bound states (BS) in the continuum or BIC with geometrically-confined photonic modes. When applied to photonic lattices, the framework provides a general criterion to predict dressed BS in lattices with topological properties by putting them in one-to-one correspondence with photonic BS. New classes of dressed BS are thus predicted in the pho…

---Condensed Matter::Quantum GasesPhysicsQuantum PhysicsWaveguide (electromagnetism)PhotonSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciContinuum (topology)business.industryFOS: Physical sciencesPhysics::OpticsGeneral Physics and Astronomy01 natural sciencesCavity QED Photonic bound states topological latticeVacancy defectQuantum mechanics0103 physical sciencesAtomBound statePhysics::Atomic PhysicsPhotonicsQuantum Physics (quant-ph)010306 general physicsbusinessEigenvalues and eigenvectors
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Work fluctuations in bosonic Josephson junctions

2016

We calculate the first two moments and full probability distribution of the work performed on a system of bosonic particles in a two-mode Bose-Hubbard Hamiltonian when the self-interaction term is varied instantaneously or with a finite-time ramp. In the instantaneous case, we show how the irreversible work scales differently depending on whether the system is driven to the Josephson or Fock regime of the bosonic Josephson junction. In the finite-time case, we use optimal control techniques to substantially decrease the irreversible work to negligible values. Our analysis can be implemented in present-day experiments with ultracold atoms and we show how to relate the work statistics to that…

---Josephson effectPopulationFOS: Physical sciences01 natural sciencesSettore FIS/03 - Fisica Della Materia010305 fluids & plasmasFock spacesymbols.namesakequant-phUltracold atomQuantum mechanics0103 physical sciences010306 general physicseducationPhysicsCondensed Matter::Quantum GasesQuantum Physicseducation.field_of_studyOptimal controlAtomic and Molecular Physics and OpticsQuantum Gases (cond-mat.quant-gas)symbolsProbability distributionCondensed Matter - Quantum GasesHamiltonian (quantum mechanics)Quantum Physics (quant-ph)cond-mat.quant-gas
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Superconducting size effect in thin films under electric field: Mean-field self-consistent model

2019

We consider effects of an externally applied electrostatic field on superconductivity, self-consistently within a BCS mean field model, for a clean 3D metal thin film. The electrostatic change in superconducting condensation energy scales as $\mu^{-1}$ close to subband edges as a function of the Fermi energy $\mu$, and follows 3D scaling $\mu^{-2}$ away from them. We discuss nonlinearities beyond gate effect, and contrast results to recent experiments.

---Josephson effectsuprajohtavuusFOS: Physical sciences02 engineering and technology01 natural sciencessuprajohteetSuperconductivity (cond-mat.supr-con)superconducting phase transitionElectric fieldCondensed Matter::Superconductivity0103 physical sciencesThin film010306 general physicsScalingCondensed Matter::Quantum GasesSuperconductivityPhysicsCondensed matter physicsCondensed Matter - SuperconductivityFermi energy021001 nanoscience & nanotechnologyMean field theorythin filmsmesoscopicsohutkalvot0210 nano-technologyEnergy (signal processing)Physical Review B
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Comparative Theoretical Analysis of BN Nanotubes Doped with Al, P, Ga, As, In, and Sb

2013

SUMMARY AND CONCLUDING REMARKS We have performed large-scale first-principles calculations ofthe electronic structure of (5,5) boron nitride nanotubescontaining the following substitutional impurity atoms: Al, P,Ga, As, In, and Sb. Calculations have been performed using thetwo methods: (i) linear combination of atomic orbitals(LCAO) with the atomic-centered Gaussian-type functions asa basis set and (ii) linearized augmented cylindrical wave(LACW) accompanied with the local density functional andmuffin-tin approximations for the electronic potential. In arelatively good qualitative agreement, both methods predict lowformation energies and, thus, relative stability of point defectsthat are assoc…

010302 applied physicsChemistryBand gap02 engineering and technologyElectronic structure021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsBond lengthchemistry.chemical_compoundGeneral EnergyBoron nitrideLinear combination of atomic orbitals0103 physical sciencesDensity of statesPhysical and Theoretical ChemistryAtomic physics0210 nano-technologyElectronic band structureBasis setThe Journal of Physical Chemistry C
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FPGA based digital lock-in amplifier for fNIRS systems

2018

Lock-In Amplifiers (LIA) represent a powerful technique helping to improve signals detectability when low signal to noise ratios are experienced. Continuous Wave functional Near Infrared Spectroscopy (CW-fNIRS) systems for e-health applications usually suffer of poor detection due to the presence of strong attenuations of the optical recovering path and therefore small signals are severely dipped in a high noise floor. In this work a digital LIA system, implemented on a Zynq® Field Programmable Gate Array (FPGA), has been designed and tested to verify the quality of the developed solution, when applied in fNIRS systems. Experimental results have shown the goodness of the proposed solutions.

010302 applied physicsComputer scienceAmplifier0206 medical engineeringLock-in amplifierDigital lock-in amplifier02 engineering and technology020601 biomedical engineering01 natural sciencesNoise floorSettore ING-INF/01 - ElettronicaSilicon photomultiplier (SiPM)Quality (physics)0103 physical sciencesElectronic engineeringContinuous waveFunctional near-infrared spectroscopyField-programmable gate arrayFpgaFunctional near-infrared spectroscopy
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Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure

2017

The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzit…

010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencePhotoluminescenceBand gapAnalytical chemistryWide-bandgap semiconductorGeneral Physics and AstronomyMineralogyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesNanocrystalline materialPhase (matter)0103 physical sciencesAbsorption (chemistry)Thin film0210 nano-technologyWurtzite crystal structure
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Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures

2020

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…

010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencebusiness.industryBand gapGeneral Physics and AstronomyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technologySubstrate (electronics)021001 nanoscience & nanotechnology01 natural sciencesAmorphous solidsymbols.namesakeSputteringEllipsometry0103 physical sciencessymbolsOptoelectronicsFourier transform infrared spectroscopyThin film0210 nano-technologybusinessRaman spectroscopy
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Optical properties of GaSe, characterization and simulation

2021

Abstract The study focuses on structural and optical characterizations and properties of the GaSe lamellar material in one hand and on a numerical simulation of the photovoltaic properties of the ITO/GaSe heterojunction in a second hand. A few layers of GaSe were exfoliated from bulk GaSe on PET substrate. The optical transmission was recorded at room temperature. It shows that GaSe exhibits both indirect and direct band gaps of about 1.92 and 2.2 eV respectively. A value, as high as 104 cm−1, of the absorption coefficient was obtained. The corresponding refractive index has been determined numerically according to the Sellmeier and Cauchy models. The interesting value of absorption shows o…

010302 applied physicsCondensed Matter::Quantum GasesMaterials scienceComputer simulationbusiness.industryBand gapHeterojunction02 engineering and technologyÒptica021001 nanoscience & nanotechnology01 natural sciencesCharacterization (materials science)Attenuation coefficient0103 physical sciencesOptoelectronicsLamellar structure0210 nano-technologybusinessAbsorption (electromagnetic radiation)Refractive indexMaterials
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